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| SMD Type MOS Field Effect Transistor 2SK3367 TO-252 +0.15 1.50-0.15 IC MOSFET Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 Features Low on-resistance RDS(on)1 = 9.0 m RDS(on)2 = 12.0 m RDS(on)3 = 14.0 m MAX. (VGS = 10 V, ID = 18 A) +0.2 9.70-0.2 +0.15 6.50-0.15 +0.2 5.30-0.2 MAX. (VGS = 4.0 V, ID = 18 A) 2.3 +0.1 0.80-0.1 +0.15 0.50-0.15 MAX. (VGS = 4.5 V, ID = 18 A) 0.127 max Low Ciss : Ciss = 2800 pF TYP. Built-in gate protection diode +0.1 0.60-0.1 +0.15 4.60-0.15 +0.28 1.50-0.1 +0.25 2.65-0.1 +0.15 5.55-0.15 1 Gate 2 Drain 3 Source Absolute Maximum Ratings Ta = 25 Parameter Drain to source voltage Gate to source voltage Drain current Power dissipation TC=25 TA=25 Channel temperature Storage temperature * PW 10 s,Duty Cycle 1% Tch Tstg Symbol VDSS VGSS ID Idp * PD Rating 30 20 36 144 40 1.0 150 -55 to +150 Unit V V A A W Electrical Characteristics Ta = 25 Parameter Drain cut-off current Gate leakage current Gat cutoff voltage Forward transfer admittance Symbol IDSS IGSS VGS(off) Yfs RDS(on)1 Drain to source on-state resistance RDS(on)2 RDS(on)3 Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total Gate Charge Gate to Source Charge Gate to Drain Charge Ciss Coss Crss ton tr toff tf QG QGS QGD ID = 36 A, VDD = 24 V, VGS = 10 V ID=18A,VGS(on)=10V,RG=10 ,VDD=15V VDS=10V,VGS=0,f=1MHZ Testconditons VDS=30V,VGS=0 VGS= 20V,VDS=0 VDS=10V,ID=1mA VDS=10V,ID=18A VGS=10V,ID=18A VGS=4.5V,ID=18A VGS=4.0V,ID=18A 1.5 13 2.0 26 7.3 9.0 9.7 2800 880 400 75 1130 165 210 49 10 14 9.0 12.0 14.0 Min Typ Max 10 10 2.5 Unit A A V S m m m pF pF pF ns ns ns ns nC nC nC 3.80 www.kexin.com.cn 1 |
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